The dual-gate MOSFET excels as an AGC-controlled amplifier. Gate 1 receives the RF input signal, while Gate 2 receives a DC control voltage (typically 0 to 4V). As the AGC voltage increases, the gain decreases.
| Parameter | Symbol | Rating | Unit | |-----------|--------|--------|------| | Drain-Source Voltage | VDS | 20 | V | | Gate 1 to Source Voltage | VG1S | ±10 | V | | Gate 2 to Source Voltage | VG2S | ±10 | V | | Drain Current | ID | 30 | mA | | Total Power Dissipation | Ptot | 250 | mW | | Channel Temperature | Tch | +125 | °C | | Storage Temperature | Tstg | -40 to +125 | °C | 3sk51 datasheet
Used for stable frequency generation in FM transmission. The dual-gate MOSFET excels as an AGC-controlled amplifier
Exceeding these values will likely destroy the device. | Parameter | Symbol | Rating | Unit